IXYS IXFH15N100Q3

Product Details

Package / Case

TO-247-3

Base Part Number

SCT10

Vgs(th) (Max) @ Id

3.5V @ 250µA

Operating Temperature

-55°C ~ 200°C (TJ)

Series

-

Rds On (Max) @ Id, Vgs

690mOhm @ 6A, 20V

FET Type

N-Channel

Power Dissipation (Max)

150W (Tc)

Packaging

Tube

Supplier Device Package

HiP247™

Vgs (Max)

+25V, -10V

Gate Charge (Qg) (Max) @ Vgs

22nC @ 20V

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 400V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

20V