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IXYS FDM100-0045SP

MOSFET N-CH 55V 100A I4-PAC-5

Manufacturer
IXYS
Datasheet
Price
0
Stock
0

Product Details

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
55V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
4.9mOhm @ 110A, 10V
Series
-
Power Dissipation (Max)
-
FET Type
N-Channel
Supplier Device Package
ISOPLUS i4-PAC™