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Infineon Technologies IRFHM792TRPBF
MOSFET 2N-CH 100V 2.3A 8PQFN
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.84
- Stock
- 0
Product Details
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 55V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 780pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 5.1A
- Part Status
- Active
- Power - Max
- 2.4W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 5.1A, 10V
- Supplier Device Package
- 8-SO