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Infineon Technologies IPP200N25N3GXKSA1

MOSFET N-CH 250V 64A TO220-3

Manufacturer
Infineon Technologies
Datasheet
Price
6.46
Stock
390

Product Details

Rds On (Max) @ Id, Vgs
2.5Ohm @ 3A, 10V
Series
-
Power Dissipation (Max)
335W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247 [B]
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
1200V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2565pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)