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Infineon Technologies IPG20N10S4L22AATMA1
MOSFET 2N-CH 100V 20A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 23291
Product Details
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 600µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 2A, 5V
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 0.73nC @ 5V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 100V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 75pF @ 50V
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 1.7A
- Part Status
- Active
- Power - Max
- -
- Mounting Type
- Surface Mount