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Infineon Technologies IPG20N06S4L26ATMA1
MOSFET 2N-CH 60V 20A TDSON-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 27955
Product Details
- Rds On (Max) @ Id, Vgs
- 29mOhm @ 5.8A, 10V
- Series
- HEXFET®
- Supplier Device Package
- 8-SO
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- Standard
- Input Capacitance (Ciss) (Max) @ Vds
- 650pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- -
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- IRF7319PBF
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)