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Infineon Technologies IPG20N06S4L11AATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.89
- Stock
- 0
Product Details
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- Series
- Automotive, AEC-Q101
- Drain to Source Voltage (Vdss)
- 40V
- FET Type
- 2 P-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds
- 2370pF @ 20V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 60.8A (Tc)
- Part Status
- Active
- Power - Max
- 75W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 12.5mOhm @ 20A, 10V
- Supplier Device Package
- 8-PQFN (5x6)