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Infineon Technologies IPG20N06S415AATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 48919
Product Details
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 20A
- Part Status
- Active
- Power - Max
- 60W
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.1V @ 25µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 22mOhm @ 17A, 10V
- Supplier Device Package
- PG-TDSON-8-10
- Series
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 100V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1755pF @ 25V