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Infineon Technologies IPG20N06S2L50AATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.56
- Stock
- 0
Product Details
- Supplier Device Package
- TSMT8
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 10V
- FET Type
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1100pF @ 10V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 5A
- Part Status
- Not For New Designs
- Power - Max
- 600mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 39mOhm @ 5A, 10V