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Infineon Technologies IPG20N04S4L11ATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.13
- Stock
- 17428
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 9.4A, 4.5V
- Supplier Device Package
- 8-SOIC
- Series
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 20V
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 1821pF @ 10V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 9.4A
- Part Status
- Active
- Power - Max
- 900mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA