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Infineon Technologies IPG20N04S4L08ATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 21250
Product Details
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 5A, 10V
- Series
- NexFET™
- Supplier Device Package
- 8-SO
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 9.4nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 741pF @ 30V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 15A
- Power - Max
- 2.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- CSD88539
- Vgs(th) (Max) @ Id
- 3.6V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)