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Infineon Technologies IPG16N10S4L61AATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.37
- Stock
- 0
Product Details
- Supplier Device Package
- 8-DFN (5x6)
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1380pF @ 15V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 11A, 12A
- Part Status
- Active
- Power - Max
- 1.9W, 2.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 11mOhm @ 20A, 10V