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Infineon Technologies IPDH4N03LAG
MOSFET N-CH 25V 90A TO252-3-11
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.21
- Stock
- 2425
Product Details
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 33A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 107W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-Pak
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 4.5V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1600pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 55A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63