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Infineon Technologies FF6MR12W2M1B11BOMA1
MOSFET MODULE 1200V 200A
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 304.56
- Stock
- 15
Product Details
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 4V @ 66mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Supplier Device Package
- Module
- Gate Charge (Qg) (Max) @ Vgs
- -
- Series
- -
- Drain to Source Voltage (Vdss)
- 1700V (1.7kV)
- FET Type
- 2 N-Channel (Half Bridge)
- Input Capacitance (Ciss) (Max) @ Vds
- 30000pF @ 10V
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 250A (Tc)
- Part Status
- Active
- Power - Max
- 1800W (Tc)
- Mounting Type
- Chassis Mount