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Infineon Technologies FF11MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 100A MODULE
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 155.83
- Stock
- 7
Product Details
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Part Status
- Active
- Power - Max
- 600W
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 4V @ 13.2mA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Supplier Device Package
- Module
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- -
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Packaging
- Tray
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 10V