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Infineon Technologies BSS670S2LH6327XTSA1
MOSFET N-CH 55V 540MA SOT23
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 27967
Product Details
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 340mOhm @ 500mA, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.25W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 0806
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 0.71nC @ 4.5V
- Vgs (Max)
- ±5V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 21pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.2V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 0806