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Infineon Technologies BSO615NGHUMA1
MOSFET 2N-CH 60V 2.6A 8SOIC
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 277
Product Details
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 4.5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 12V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 1730pF @ 6V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 10A
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- IRF7910PBF
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 8A, 4.5V
- Series
- HEXFET®
- Supplier Device Package
- 8-SO