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Infineon Technologies BSC750N10NDGATMA1
MOSFET 2N-CH 100V 3.2A 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 20A, 10V
- Supplier Device Package
- PG-TISON-8
- Series
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 8.4nC @ 4.5V
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 25V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1100pF @ 12V
- FET Feature
- Logic Level Gate, 4.5V Drive
- Current - Continuous Drain (Id) @ 25°C
- 19A, 41A
- Part Status
- Active
- Power - Max
- 2.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)