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GeneSiC Semiconductor MSRT20060(A)D
DIODE GEN PURP 600V 200A 3 TOWER
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 78.27
- Stock
- 0
Product Details
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Chassis Mount
- Package / Case
- Three Tower
- Diode Configuration
- 1 Pair Series Connection
- Supplier Device Package
- Three Tower
- Current - Reverse Leakage @ Vr
- 10µA @ 800V
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Operating Temperature - Junction
- -55°C ~ 150°C
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 200A
- Series
- -
- Current - Average Rectified (Io) (per Diode)
- 200A
- Packaging
- Bulk