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GeneSiC Semiconductor GA50JT17-247
TRANS SJT 1.7KV 100A
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 75V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4430pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 87A (Tc)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.7V @ 100µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.2mOhm @ 52A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 140W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-PAK (TO-252AA)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 126nC @ 10V