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GeneSiC Semiconductor GA10SICP12-263
TRANS SJT 1200V 25A TO263-7
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 27.92
- Stock
- 0
Product Details
- Series
- Polar™
- Power Dissipation (Max)
- 695W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-227B
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 230nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 14000pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 33A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- 6.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 210mOhm @ 20A, 10V