GeneSiC Semiconductor GA100JT17-227

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4.5V @ 630µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

190mOhm @ 7.6A, 10V

Series

CoolMOS™ P6

Power Dissipation (Max)

151W (Tc)

FET Type

N-Channel

Supplier Device Package

D²PAK (TO-263AB)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1750pF @ 100V