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GeneSiC Semiconductor GA05JT12-263
TRANS SJT 1200V 15A
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 10.92
- Stock
- 952
Product Details
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1500pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 17.5A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-247-3
- Base Part Number
- STW20N
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- SuperMESH5™
- Rds On (Max) @ Id, Vgs
- 330mOhm @ 9A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 250W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-247-3
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 950V