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GeneSiC Semiconductor GA05JT03-46
TRANS SJT 300V 9A
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 65.27
- Stock
- 14
Product Details
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 900mA, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 25W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO251-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 4.8nC @ 400V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 174pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 3.5V @ 40µA