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GeneSiC Semiconductor 1N8030-GA
DIODE SCHOTTKY 650V 750MA TO257
- Manufacturer
- GeneSiC Semiconductor
- Datasheet
- Price
- 181.92
- Stock
- 9
Product Details
- Current - Reverse Leakage @ Vr
- 5µA @ 650V
- Speed
- No Recovery Time > 500mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Series
- -
- Current - Average Rectified (Io)
- 2.5A
- Packaging
- Tube
- Operating Temperature - Junction
- -55°C ~ 250°C
- Diode Type
- Silicon Carbide Schottky
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 2.5A
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-257-3
- Base Part Number
- 1N8032
- Capacitance @ Vr, F
- 274pF @ 1V, 1MHz
- Supplier Device Package
- TO-257
- Reverse Recovery Time (trr)
- 0ns