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Diodes Incorporated ZXMN3F31DN8TA
MOSFET 2N-CH 30V 5.7A 8SOIC
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 757
Product Details
- Rds On (Max) @ Id, Vgs
- -
- Supplier Device Package
- 10-Picostar (3.37x1.47)
- Series
- NexFET™
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 10V
- FET Type
- 2 N-Channel (Dual) Common Drain
- Drain to Source Voltage (Vdss)
- -
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- -
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Active
- Power - Max
- 2.5W
- Mounting Type
- Surface Mount
- Package / Case
- 10-XFLGA
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)