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Diodes Incorporated HTMN5130SSD-13
MOSFET 2N-CH 55V 2.6A 8SOIC
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0.81
- Stock
- 0
Product Details
- Series
- AlphaMOS
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 4.5V, 65nC @ 4.5V
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1075pF @ 15V, 5560pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc), 85A (Tc)
- Part Status
- Active
- Power - Max
- 24W, 75W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA, 1.9V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
- Supplier Device Package
- 8-DFN (5x6)