Diodes Incorporated DMN61D9U-13

Product Details

Vgs(th) (Max) @ Id

1.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

710mOhm @ 400mA, 4.5V

Series

-

Power Dissipation (Max)

900mW (Ta)

FET Type

P-Channel

Supplier Device Package

3-DFN (1.0 x 0.60)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

750nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

700mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-UFDFN