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Diodes Incorporated DMN601DWKQ-7
MOSFET N-CHAN 41V 60V SOT363
- Manufacturer
- Diodes Incorporated
- Datasheet
- Price
- 0
- Stock
- 7107
Product Details
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 100mA
- Part Status
- Active
- Power - Max
- 200mW (Ta)
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Vgs(th) (Max) @ Id
- 1.7V @ 100µA
- Operating Temperature
- 150°C
- Rds On (Max) @ Id, Vgs
- 12Ohm @ 10mA, 4V
- Supplier Device Package
- US6
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- -
- FET Type
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 9.1pF @ 3V