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Central Semiconductor Corp CTLDM8120-M621H TR
MOSFET P-CH 20V DFN6
- Manufacturer
- Central Semiconductor Corp
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Power Dissipation (Max)
- 2.5W (Tc)
- Series
- -
- Supplier Device Package
- TO-92
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 6.1nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 138pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10Ohm @ 250mA, 10V