Images are for reference only. See Product Specifications for product details
Central Semiconductor Corp CTLDM8002A-M621H TR
MOSFET N-CH 50V DFN6
- Manufacturer
- Central Semiconductor Corp
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 150mOhm @ 950mA, 4.5V
- Power Dissipation (Max)
- 1.6W (Ta)
- Series
- -
- Supplier Device Package
- TLM621H
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 3.56nC @ 4.5V
- Vgs (Max)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 200pF @ 16V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 950mA (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -65°C ~ 150°C (TJ)