Alpha & Omega Semiconductor Inc. AOTF11S60L

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1280pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Part Status

Last Time Buy

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2.1V @ 1.54mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

240mOhm @ 10.6A, 10V

Series

SIPMOS®

Power Dissipation (Max)

128W (Tc)

FET Type

P-Channel

Supplier Device Package

PG-TO220-3